Graphene has been touted as the material to usurp silicon in next-generation electronics, but it remains unlikely without an economic approach to fabricating high-quality, wafer-scale graphene layers. Now, researchers in Korea have demonstrated a way of growing several patches of oriented graphene until they coalesce seamlessly, providing a route to producing high-quality single-crystal graphene over large areas…….
http://nanotechweb.org/cws/article/tech/56839
