Researchers in the Netherlands and Spain say that they have succeeded in experimentally mapping the density of charge trap states within the bandgap of a semiconducting quantum dot film for the first time. The new work shows that electrons are trapped close to the valence band in the material – a result that has been backed up with theoretical calculations too. The experiments could help in the design and fabrication of improved quantum dot devices in applications such as solar cells, light-emitting diodes and thermoelectrics………..
http://nanotechweb.org/cws/article/tech/60908