Researchers in Sweden, Germany and Taiwan have succeeded in fabricating single-crystalline gallium arsenide nanowires doped with magnetic manganese ions using an innovative implantation technique. Magnetic nanowires of this type are very difficult to make using conventional semiconductor growth techniques and the new method means that there is now another way to directly integrate magnetic devices onto silicon chips using mainstream silicon technology…….
http://nanotechweb.org/cws/article/tech/55197
