A new class of magnetic memory known as spin-transfer torque magnetic random-access memory (STT-MRAM) could act as a memristive device and be used to make a synaptic-like junction capable of “learning”, according to new experiments by researchers from the Université Paris-Sud and the CEA in France. The junction might be useful as a memory element in integrated circuits and next-generation computers that mimic how the human brain works……
http://nanotechweb.org/cws/article/tech/60960