Researchers in the US, Japan and China are the first to have studied the anisotropic light–matter interactions in gallium telluride (GaTe), a technologically important 2D semiconductor with in-plane anisotropy. Thanks to techniques like anisotropic optical extinction and Raman spectroscopy, they have found that the anisotropy is related to various parameters such as GaTe flake thickness, the wavelength of the laser used to excite the material and the frequency of phonons in it. The findings could help make optoelectronics and thermoelectric devices from the 2D structures……..
http://nanotechweb.org/cws/article/tech/66534
