Researchers from the nanoelectronics research centre Imec in Belgium have successfully developed a methodology to map quantitatively the distribution of active dopants in confined 3D volumes. The method is based on high-vacuum scanning spreading resistance microscopy (HV-SSRM). This research is an important step towards in-depth understanding of nanowire-based transistors.

http://nanotechweb.org/cws/article/lab/45932