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Indium selenide makes high-gain phototransistor

Indium selenide makes high-gain phototransistor

November 24, 2015November 24, 2015 ramjitti Technology Update

Most photodetectors based on 2D materials made to date work using a combination of many different photocurrent generation mechanisms, including the photoconductive and photogating effects, which means that they are difficult to manage. Now, a research team in the Netherlands and Spain have developed photodetecting devices based on indium selenide (In2Se3), in which they can control the mechanism that produces the photocurrent by varying the back gate voltage. The detector could be well suited for applications in which very weak light sources need to be detected – for example, in night vision or astronomy instruments……….

http://nanotechweb.org/cws/article/tech/63242

The device
The device

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