Layered transition metal dichalcogenides (a new class of technologically important 2D materials) might be ideal in a host of future electronic, optoelectronic and even spintronic devices thanks to the fact that they have very different physical properties from their 3D counterparts. However, although the materials can be easily doped with electrons (known as n-type doping), hole (or p-) doping them is much more difficult. A team of researchers in the US, Taiwan and Korea may now have gone a long way in overcoming this problem by successfully doping molybdenum disulphide with niobium. p-doping is just as important as n-doping because it is a prerequisite for making p-n junctions, which are the building blocks of all modern electronics…..
http://nanotechweb.org/cws/article/tech/59556
