Oxide-based two-terminal resistive random access memory (RRAM) could be ideal for next-generation “non-volatile” memory applications. Researchers at Rice University in the US have now unveiled one such new RRAM based on a nanoporous silicon oxide structure that switches through an internal vertical nanogap. The device might just be the best candidate to date for replacing existing silicon-based flash memories, says the team.
http://nanotechweb.org/cws/article/tech/57925
